SiO2 thin films were prepared with radio frequency magnetron sputtering on quartz glass substrates, and the effects of sputtering power on the stoichiometric ratio, microstructure, surface morphology and optical properties of the film within 300–1100 nm were investigated. The molar ratio of O/Si in the film increased continuously from 1.87 to 1.99, very close to the ideal stoichiometric ratio of 2:1 with the sputtering power decreasing from 150 to 60 W. And the surface of SiO2 thin film became more compact and flatter, and the roughness was significantly reduced. All the SiO2 films were amorphous, and the power had no obvious effect on the crystalline state of the film. When the sputtering power decreased from 150 to 60 W, the refractive index and absorptivity of SiO2 film in the range of 300–1100 nm decreased continuously, while the transmittance within 300–1100 nm of the coated quartz glass (hereinafter referred to as the transmittance of film) increased continuously, and the integrated transmittance increased from 92.7 to 93.0%.
Silicon dioxide, also known as silica, has a chemical formula of SiO2. Silicon dioxide is commonly found in nature as sand or quartz. It is primarily used in the production of glass for windows and beverage bottles. It is evaporated under vacuum for the fabrication of optoelectronic and circuit devices.
Applications:
Silicon dioxide is a widely used thin film material. Silicon dioxide (Fused Quartz) sputtering targets have properties such as anti-resistance, hardness, corrosion resistance, dielectric, optical transparency and a number of others.
In the microelectronic field, silicon dioxide is used as the most common dielectric. Silicon dioxide also can be used as the gate dielectric layer of MOS and CMOS devices. In optical field, silicon dioxide is utilized for passive or active optical devices, which not only have excellent light-admitting quality but also have other basic functions, such as electro-optic modulation and optical amplification. Therefore, silicon dioxide can be used as waveguide film, AR coating and antireflection film. Silicon dioxide thin film also can be used as a corrosion protective layer of metals.
Properties:
Material Type: Silicon (IV) Oxide
Symbol: SiO2
Color/Appearance: White, Crystalline Solid
Melting Point: 1,610°C
Theoretical Density: ~2.65 g/cm3
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Z Ratio: 1.00**
Sputter: RF
Max Power Density: 30 Watts/in2*
Type of Bond: Indium, Elastomer
(typically to a Copper Back Plate)
(* The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material. ** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value)
Form/Shape: Discs, Rectangle, Step, Plates
Available sizes: 1 inch to 8 inch diameters or lengths x 0.0625 inch to 0.250 inch
Safety Data Sheet (pdf)
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