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Our comprehensive offering of sputtering targets, evaporation sources and other deposition materials is listed by material throughout the website. Below you will find budgetary pricing for sputtering targets and deposition materials per your requirements. Actual prices may vary due to market fluctuations. To speak to someone directly about current pricing or for a quote on sputtering targets and other deposition products not listed, please click here.
Silicon dioxide, also known as silica, has a chemical formula of SiO2. It has a melting point of 1,610°C, a density of 2.648 g/cc, and a vapor pressure of 10-4 Torr at 1,025°C. Silicon dioxide is commonly found in nature as sand or quartz. It is primarily used in the production of glass for windows and beverage bottles. It is evaporated under vacuum for the fabrication of optoelectronic and circuit devices.
* This is a recommendation based on our experience running these materials in KJLC guns. The ratings are based on unbonded targets and are material specific. Bonded targets should be run at lower powers to prevent bonding failures. Bonded targets should be run at 20 Watts/Square Inch or lower, depending on the material.
* Suggested maximum power densities are based on using a sputter up orientation with optimal thermal transfer from target to the sputter cathode cooling well. Using other sputtering orientations or if there is a poor thermal interface between target to sputter cathode cooling well may require a reduction in suggested maximum power density and/or application of a thermal transfer paste. Please contact techinfo@lesker.com for specific power recommendations.
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** The z-ratio is unknown. Therefore, we recommend using 1.00 or an experimentally determined value. Please click here for instructions on how to determine this value.
Z-Factors
Empirical Determination of Z-Factor
Unfortunately, Z Factor and Shear Modulus are not readily available for many materials. In this case, the Z-Factor can also be determined empirically using the following method:
Another alternative is to change crystals frequently and ignore the error. The graph below shows the % Error in Rate/Thickness from using the wrong Z Factor. For a crystal with 90% life, the error is negligible for even large errors in the programmed versus actual Z Factor.
Note:This material may require specialandprocedures. This process may not be necessary with other materials. Targets that have a low thermal conductivity are susceptible to thermal shock. Please click here forfor
Recently a customer asked about continuously running an SiO2 Sputtering Target and specifically concerns about arcing.
There is always going to be some “re-deposition” onto a sputtering target where stray molecules that have been knocked off the target surface reattach back onto the target surface. In your case, using a non-magnetron planar diode cathode assembly with an rf generator this should not be an issue. The ions should be striking the target surface randomly and not in any selected area of the target surface. The rf generator should provide an even, homogeneous plasma uniformly across the entire target surface, bombarding both re-deposited and virgin areas of the SiO2 target surface randomly and equally. The resultant films may vary a bit in stoichiometry as the re-deposited (Si)x(O2-x) areas of the target surface may be slightly silicon rich or oxygen rich depending on the volume of the partial pressure of the oxygen added to the argon working gas, but this should NOT affect the ability of the sputtering process to sustain a constant uniform plasma and deposition.
If there is arcing, you may be building up material within the gap between the dark space shield and the target surface. This should be around 1-3mm or so and the dark space shield should always protrude beyond the target surface by about 3mm or so. Keep this gap area clean, even if it means sanding or abrading the components occasionally. Arcing means that the plasma is going to ground potential for some reason. Make certain that the reflected power on your rf generator is not drifting up with time. This must be kept at absolute zero. Is your rf generator set at constant voltage, constant current or constant power? Check and see if both the current and the voltage are remaining constant over time at whatever power level you are using. Something may be changing. If the impedance in the target is changing, due to re-deposition and/or target thickness changes (becoming thinner over time), the power supply and the tuning network needs to compensate accordingly to maintain an equilibrium balance within the plasma.
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